A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

Sensors

Orazio Aiello¹ 

关键词: current sensor;    CMOS integrated circuit;    smart power;    electromagnetic interference (EMI);    electromagnetic compatibility (EMC);    senseFET;    miller effect;   

DOI  :  10.3390/s130201856

来源: mdpi

【 摘 要 】

This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.