Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Materials

Guillermo Santana³  Osvaldo de Melo¹  Jorge Aguilar-Hernández¹  Rogelio Mendoza-Pérez⁴  B. Marel Monroy³  Adolfo Escamilla-Esquivel¹  Máximo López-López²  Francisco de Moure¹  Luis A. Hernández¹ 

[1] Escuela Superior de Física y Matemáticas del IPN, Edif. 9, Unidad Profesional Adolfo López Mateos, Col. Lindavista, México DF, C.P. 07738, Mexico; E-Mails:;Departamento de Física, Centro de Investigación y Estudios Avanzados del IPN, México DF, C.P. 07360, Mexico; E-Mail:;Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Coyoacán, México DF, C.P. 04510, Mexico; E-Mail:;Universidad Autónoma de la Ciudad de México, Campus San Lorenzo Tezonco, México DF, C.P. 09790, Mexico; E-Mail:

关键词: solar cells;    infrared-CSVT;    GaN;    photoluminescence;    thin films;   

DOI  :  10.3390/ma6031050

来源: mdpi

【 摘 要 】

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL) centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.