Materials | |
Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon | |
Hu Huang2  Hongwei Zhao1  Chengli Shi2  Lin Zhang2  Shunguang Wan2  | |
[1] College of Mechanical Science & Engineering, Jilin University, Renmin Street 5988, Changchun 130025, China; | |
关键词: pop-out; single crystal silicon; maximum penetration load; loading/unloading rate; statistic; | |
DOI : 10.3390/ma6041496 | |
来源: mdpi | |
【 摘 要 】
Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load
【 授权许可】
CC BY
© 2013 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190037069ZK.pdf | 480KB | download |