Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

Materials

Hu Huang²  Hongwei Zhao¹  Chengli Shi²  Lin Zhang²  Shunguang Wan² 

[1] College of Mechanical Science & Engineering, Jilin University, Renmin Street 5988, Changchun 130025, China;

关键词: pop-out;    single crystal silicon;    maximum penetration load;    loading/unloading rate;    statistic;   

DOI  :  10.3390/ma6041496

来源: mdpi

【 摘 要 】

Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load P_po for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load P_po. Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon. For a given maximum penetration load, the load P_po for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction P_po/P_max approximately keeps in the range of 0.2~0.5 for different maximum penetration loads changing from 15 mN to 150 mN.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.