A Thermal Model for Carbon Nanotube Interconnects

Nanomaterials

Kaji Muhammad Mohsin²  Ashok Srivastava²  Ashwani K. Sharma¹ 

[1] Air Force Research Laboratory/Space Electronics Branch, Space Vehicles Directorate, Electronics Foundations Group, 3550 Aberdeen Avenue SE, Kirtland, NM 87117, USA; E-Mails:;School of Electrical Engineering and Computer Science, Louisiana State University, Baton Rouge, LA 70803, USA; E-Mail:

关键词: SWCNT;    VLSI interconnect;    Joule heating;    scattering;   

DOI  :  10.3390/nano3020229

来源: mdpi

【 摘 要 】

In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S₁₂ parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.