Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Electronics

Ivan S. Esqueda¹  Cory D. Cress²  Travis J. Anderson²  Jonathan R. Ahlbin¹  Michael Bajura¹  Michael Fritze¹ 

[1] Information Sciences Institute, University of Southern California, Arlington, VA 22203, USA; E-Mails:;U.S. Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375, USA; E-Mails:

关键词: graphene;    field-effect-transistors (FETs);    total ionizing dose (TID);    radiation;    conductivity;    mobility;   

DOI  :  10.3390/electronics2030234

来源: mdpi

【 摘 要 】

This paper investigates total ionizing dose (TID) effects in top-gated epitaxial graphene field-effect-transistors (GFETs). Measurements reveal voltage shifts in the current-voltage (I-V) characteristics and degradation of carrier mobility and minimum conductivity, consistent with the buildup of oxide-trapped charges. A semi-empirical approach for modeling radiation-induced degradation in GFETs effective carrier mobility is described in the paper. The modeling approach describes Coulomb and short-range scattering based on calculations of charge and effective vertical field that incorporate radiation-induced oxide trapped charges. The transition from the dominant scattering mechanism is correctly described as a function of effective field and oxide trapped charge density. Comparison with experimental data results in good qualitative agreement when including an empirical component to account for scatterer transparency in the low field regime.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.