Tip-Enhanced Raman Imaging and Nano Spectroscopy of Etched Silicon Nanowires

Sensors

Nastaran Kazemi-Zanjani¹  Erwan Kergrene¹  Lijia Liu¹  Tsun-Kong Sham¹ 

[1] Department of Chemistry and Centre for Advanced Materials and Biomaterials, University of Western Ontario, 1151 Richmond Street, London, N6A 5B7, Canada;

关键词: tip-enhanced Raman spectroscopy;    atomic force microscopy;    silicon nanowires;    strain/stress-induced broadening;   

DOI  :  10.3390/s131012744

来源: mdpi

【 摘 要 】

Tip-enhanced Raman spectroscopy (TERS) is used to investigate the influence of strains in isolated and overlapping silicon nanowires prepared by chemical etching of a (100) silicon wafer. An atomic force microscopy tip made of nanocrystalline diamond coated with a thin layer of silver is used in conjunction with an excitation wavelength of 532 nm in order to probe the first order optical phonon mode of the [100] silicon nanowires. The frequency shift and the broadening of the silicon first order phonon are analyzed and compared to the topographical measurements for distinct configuration of nanowires that are disposed in straight, bent or overlapping configuration over a microscope coverslip. The TERS spatial resolution is close to the topography provided by the nanocrystalline diamond tip and subtle spectral changes are observed for different nanowire configurations.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.