Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

Sensors

Tomoaki Masuzawa⁴  Ichitaro Saito⁴  Takatoshi Yamada³  Masanori Onishi⁴  Hisato Yamaguchi⁴  Yu Suzuki⁴  Kousuke Oonuki⁴  Nanako Kato⁴  Shuichi Ogawa⁵  Yuji Takakuwa⁵  Angel T. T. Koh²  Daniel H. C. Chua²  Yusuke Mori⁶  Tatsuo Shimosawa¹ 

[1] Department of Clinical Laboratory, Faculty of Medicine, University of Tokyo, 113-8655 Tokyo, Japan; E-Mail:;Department of Materials Science & Engineering, National University of Singapore, 117574 Singapore, Singapore; E-Mails:;Nanotube Research Center, National Institute of Advanced Industrial Science and Technology, 305-8565 Tsukuba, Japan; E-Mail:;Department of Material Science, International Christian University, 181-8585 Tokyo, Japan; E-Mails:;Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 980-8577 Sendai, Japan; E-Mails:;Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 565-0871 Osaka, Japan; E-Mail:

关键词: amorphous selenium;    photodetector;    carrier multiplication;    diamond;    cold cathode;   

DOI  :  10.3390/s131013744

来源: mdpi

【 摘 要 】

Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized.

【 授权许可】

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© 2013 by the authors; licensee MDPI, Basel, Switzerland.