Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

Sensors

Seongjeen Kim²  Jehoon Choi²  Minsoo Jung²  Sungjae Joo¹ 

[1] Creative Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon 642-120, Korea; E-Mails:;Department of Computer Engineering, Kyungnam University, Changwon 631-701, Korea; E-Mails:

关键词: hydrogen sensor;    high temperature;    SiC;    Ta₂O₅;    MIS structure;   

DOI  :  10.3390/s131013575

来源: mdpi

【 摘 要 】

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta₂O₅) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta₂O₅/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.