期刊论文详细信息
Sensors
Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications
Seongjeen Kim2  Jehoon Choi2  Minsoo Jung2  Sungjae Joo1 
[1] Creative Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon 642-120, Korea; E-Mails:;Department of Computer Engineering, Kyungnam University, Changwon 631-701, Korea; E-Mails:
关键词: hydrogen sensor;    high temperature;    SiC;    Ta2O5;    MIS structure;   
DOI  :  10.3390/s131013575
来源: mdpi
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【 摘 要 】

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.

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