Materials | |
Topological Defects in Topological Insulators and Bound States at Topological Superconductor Vortices | |
Vincenzo Parente1  Gabriele Campagnano1  Domenico Giuliano2  Arturo Tagliacozzo1  | |
[1] Dipartimento di Fisica, Università di Napoli Federico II, Via Cintia, Napoli 80126, |
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关键词: Dirac electrons; topological defects; two-band topological insulators; Majorana bound state; | |
DOI : 10.3390/ma7031652 | |
来源: mdpi | |
【 摘 要 】
The scattering of Dirac electrons by topological defects could be one of the most relevant sources of resistance in graphene and at the boundary surfaces of a three-dimensional topological insulator (3D TI). In the long wavelength, continuous limit of the Dirac equation, the topological defect can be described as a distortion of the metric in curved space, which can be accounted for by a rotation of the Gamma matrices and by a spin connection inherited with the curvature. These features modify the scattering properties of the carriers. We discuss the self-energy of defect formation with this approach and the electron cross-section for intra-valley scattering at an edge dislocation in graphene, including corrections coming from the local stress. The cross-section contribution to the resistivity,
【 授权许可】
CC BY
© 2014 by the authors; licensee MDPI, Basel, Switzerland
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