Intra- and Interlayer Electron-Phonon Interactions in 12/12C and 12/13C BiLayer Graphene

Applied Sciences

Daniela L. Mafra¹ 

[1] Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139-4307, USA; E-Mail:

关键词: bilayer graphene;    interlayer interaction;    electron-phonon coupling;   

DOI  :  10.3390/app4020207

来源: mdpi

【 摘 要 】

This review focuses on intra- and interlayer (IL) electron-phonon interactions and phonon self-energy renormalizations in twisted and AB-stacked bilayer graphene (2LG) composed either only of ¹²C or a mixing of ¹²C and ¹³C isotopes. A simple way to imagine a 2LG is by placing one monolayer graphene (1LG) on top of another 1LG. The orientation of one of the layers with relation to the other may originate a twisted 2LG system (known as turbostratic) as well as a AB-stacked system, also known as Bernal stacking. By rotating the layers of a 2LG one can departure from a fully misoriented system to achieve the AB-stacked configuration and their IL interactions can be dramatically different being close to zero in a fully misoriented system and maximum in an AB-stacked system. Interlayer interactions are expected to slightly perturb the intralayer phonons and they also govern the low-energy electronic and vibrational properties, which are of primary importance to phenomena such as transport, infrared (IR) optics and telecommunication bands in the IR range. Therefore, a comprehensive discussion combining intra- and interlayer phenomena is necessary and addressed throughout the text.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland