Directed Kinetic Self-Assembly of Mounds on Patterned GaAs (001): Tunable Arrangement, Pattern Amplification and Self-Limiting Growth

Nanomaterials

Chuan-Fu Lin²  Hung-Chih Kan²  Subramaniam Kanakaraju¹  Christopher Richardson¹ 

[1] Laboratory for Physical Science, 8050 Greenmead Drive, College Park, MD 20740, USA; E-Mails:;Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA; E-Mails:

关键词: directed self-assembly;    self-assembly;    self-limiting behavior;    pattern amplification;    nanostructures;    growth mounds;    crystal growth;   

DOI  :  10.3390/nano4020344

来源: mdpi

【 摘 要 】

We present results demonstrating directed self-assembly of nanometer-scale mounds during molecular beam epitaxial growth on patterned GaAs (001) surfaces. The mound arrangement is tunable via the growth temperature, with an inverse spacing or spatial frequency which can exceed that of the features of the template. We find that the range of film thickness over which particular mound arrangements persist is finite, due to an evolution of the shape of the mounds which causes their growth to self-limit. A difference in the film thickness at which mounds at different sites self-limit provides a means by which different arrangements can be produced.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.