Influence of Carrier Gas Composition on the Stress of Al2O3 Coatings Prepared by the Aerosol Deposition Method

Materials

Michael Schubert¹  Jörg Exner¹ 

[1] Department of Functional Materials, University of Bayreuth, Universitätsstraße 30, Bayreuth 95440, Germany;

关键词: aerosol deposition;    film stress;    Al₂O₃;    carrier gas;    room temperature impact consolidation (RTIC);   

DOI  :  10.3390/ma7085633

来源: mdpi

【 摘 要 】

Al₂O₃ films were prepared by the aerosol deposition method at room temperature using different carrier gas compositions. The layers were deposited on alumina substrates and the film stress of the layer was calculated by measuring the deformation of the substrate. It was shown that the film stress can be halved by using oxygen instead of nitrogen or helium as the carrier gas. The substrates were annealed at different temperature steps to gain information about the temperature dependence of the reduction of the implemented stress. Total relaxation of the stress can already be achieved at 300 °C. The XRD pattern shows crystallite growth and reduction of microstrain while annealing.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.