Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

Sensors

Khalil Jradi¹  Denis Pellion¹ 

[1] Laboratory Electronique, Informatique et Image, Le2i UMR CNRS 6306, Aile de l'ingénieur-9, Avenue Alain Savary-BP 47870, Dijon Cedex 21078; France;

关键词: photodetectors;    avalanche photodiodes (APDs);    optoelectronics;    photonic integrated circuit;    integrated optoelectronic circuits;   

DOI  :  10.3390/s141222773

来源: mdpi

【 摘 要 】

Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 μm down to 5 μm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.