Sensors | |
Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors | |
Yucai Wang1  | |
[1] Department of Electrical and Computer Engineering, McGill University, McConnell Engineering Building, 3480 University Street, Montreal, QC H3A 0E9, Canada; E-Mail | |
关键词: CMOS sensor circuits; capacitance measurement; MEMS pressure sensor; wide temperature electronics; high temperature sensors; capacitance to voltage converter; | |
DOI : 10.3390/s150204253 | |
来源: mdpi | |
【 摘 要 】
We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between −55 °C and 225 °C. The circuit is implemented using IBM 0.13 μm CMOS technology with 2.5 V power supply. A constant-
【 授权许可】
CC BY
© 2015 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190016313ZK.pdf | 1646KB | download |