Gain and Threshold Current in Type II In(As)Sb Mid-Infrared Quantum Dot Lasers

Photonics

Qi Lu¹  Qiandong Zhuang² 

[1] Physics Department, Lancaster University, Lancaster LA1 4YB, UK;

关键词: quantum dots;    mid-infrared;    semiconductor lasers;   

DOI  :  10.3390/photonics2020414

来源: mdpi

【 摘 要 】

In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 µm and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm⁻¹ per QD layer. A large blue shift (~150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.