期刊论文详细信息
Energies
An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants
Vijith Vijayakumaran Nair2  Jun Rim Choi1 
[1] School of Electronics Engineering, Kyungpook National University, Buk-gu, Daegu 702-701, Korea; E-Mail
关键词: high-voltage bridge rectifier;    low drop-out voltage;    regulator;    battery charger circuit;    power efficiency;    wireless power receiver;   
DOI  :  10.3390/en8065467
来源: mdpi
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【 摘 要 】

In near-field wireless-powered biomedical implants, the receiver voltage largely overrides the compliance of low-voltage power receiver systems. To limit the induced voltage, generally, low-voltage topologies utilize limiter circuits, voltage clippers or shunt regulators, which are power-inefficient methods. In order to overcome the voltage limitation and improve power efficiency, we propose an integrated chip high-voltage power receiver based on the step down approach. The topology accommodates voltages as high as 30 V and comprises a high-voltage semi-active rectifier, a voltage reference generator and a series regulator. Further, a battery management circuit that enables safe and reliable implant battery charging based on analog control is proposed and realized. The power receiver is fabricated in 0.35-μm high-voltage Bipolar-CMOS-DMOStechnology based on the LOCOS0.35-μm CMOS process. Measurement results indicate 83.5% power conversion efficiency for a rectifier at 2.1 mA load current. The low drop-out regulator based on the current buffer compensation and buffer impedance attenuation scheme operates with low quiescent current, reduces the power consumption and provides good stability. The topology also provides good power supply rejection, which is adequate for the design application. Measurement results indicate regulator output of 4 ± 0.03 V for input from 5 to 30 V and 10 ± 0.05 V output for input from 11 to 30 V with load current 0.01–100 mA. The charger circuit manages the charging of the Li-ion battery through all if the typical stages of the Li-ion battery charging profile.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland

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