Top-Down CMOS-NEMS Polysilicon Nanowire with Piezoresistive Transduction

Sensors

Eloi Marigó²  Marc Sansa¹  Francesc Pérez-Murano¹  Arantxa Uranga²  Núria Barniol² 

[1] Instituto de Microelectrónica de Barcelona (IMB-CNM-CSIC), Campus UAB, Barcelona 08193, Spain; E-Mails:;Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain; E-Mails:

关键词: NEMS;    CMOS-NEMS;    mechanical resonators;    piezoresistive transduction;    polysilicon nanowires;   

DOI  :  10.3390/s150717036

来源: mdpi

【 摘 要 】

A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. The resonator made from a single polysilicon layer has a fundamental in-plane resonance at 27 MHz. Piezoresistive transduction avoids the effect of the parasitic capacitance assessing the capability to use it and enhance the CMOS-NEMS resonators towards more efficient oscillator. The displacement derived from the capacitive transduction allows to compute the gauge factor for the polysilicon material available in the CMOS technology.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.