On-Chip Sensing of Thermoelectric Thin Film’s Merit

Sensors

Zhigang Xiao²  Xiaoshan Zhu¹ 

[1] Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, USA; E-Mail:;Department of Electrical Engineering, Alabama A&M University, Normal, AL 35762, USA

关键词: silicon diode temperature sensors;    thermoelectric thin films and devices;    Sb₂Te₃ thin film;    microfabrication;   

DOI  :  10.3390/s150717232

来源: mdpi

【 摘 要 】

Thermoelectric thin films have been widely explored for thermal-to-electrical energy conversion or solid-state cooling, because they can remove heat from integrated circuit (IC) chips or micro-electromechanical systems (MEMS) devices without involving any moving mechanical parts. In this paper, we report using silicon diode-based temperature sensors and specific thermoelectric devices to characterize the merit of thermoelectric thin films. The silicon diode temperature sensors and thermoelectric devices were fabricated using microfabrication techniques. Specifically, e-beam evaporation was used to grow the thermoelectric thin film of Sb₂Te₃ (100 nm thick). The Seebeck coefficient and the merit of the Sb₂Te₃ thin film were measured or determined. The fabrication of silicon diode temperature sensors and thermoelectric devices are compatible with the integrated circuit fabrication.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.