Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

Materials

Bilel Azeza³  Mohamed Helmi Hadj Alouane³  Bouraoui Ilahi⁴  Gilles Patriarche²  Larbi Sfaxi³  Afif Fouzri¹  Hassen Maaref³  Ridha M’ghaieth³ 

[1] Laboratoire de Physico-Chimie des Matériaux, Faculté des Sciences de Monastir, Université de Monastir, Monastir 5019, Tunisie; E-Mail:;Laboratoire de Photonique et de Nanostructures (LPN), UPR20-CNRS, Route de Nozay, Marcoussis 91460, France; E-Mail:;Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Monatir 5019, Tunisie; E-Mails:;King Saud University, Department of Physics and Astronomy, College of Sciences, P.O. 2455, Riyadh 11451, Kingdom of Saudi Arabia; E-Mail:

关键词: III-V materials for solar cells;    Si substrate;    molecular beam epitaxy;    solar cell;   

DOI  :  10.3390/ma8074544

来源: mdpi

【 摘 要 】

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n⁺-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n⁺-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.