Capacitive Behavior of Single Gallium Oxide Nanobelt

Materials

Haitao Cai²  Hang Liu²  Huichao Zhu²  Pai Shao²  Changmin Hou¹ 

[1]State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China

[2]School of Electronic Science and Technology, Key Laboratory for Integrated Circuits Technology of Liaoning Province, Dalian University of Technology, Dalian 116024, China

[3] E-Mails:

关键词: Ga₂O₃;    nanobelt;    capacitive behavior;    impedance analysis;   

DOI  :  10.3390/ma8085244

来源: mdpi

【 摘 要 】

In this research, monocrystalline gallium oxide (Ga₂O₃) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga₂O₃ nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga₂O₃ nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga₂O₃ nanobelt, indicating the existence of capacitive elements in the Pt/Ga₂O₃/Pt structure.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.