Crystal Growth of Ca3Nb(Ga1−xAlx)3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations

Materials

Yuui Yokota¹  Tetsuo Kudo²  Yuji Ohashi²  Andrey Medvedev²  Shunsuke Kurosawa¹  Kei Kamada¹  Akira Yoshikawa¹ 

[1] New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10, Aoba, Aramaki, Aoba-ku, Miyagi, Sendai 980-8579, Japan; E-Mails:;Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Miyagi, Sendai 980-8577, Japan; E-Mails:

关键词: langasite;    piezoelectric crystal;    single crystal;    micro-pulling-down method;   

DOI  :  10.3390/ma8095264

来源: mdpi

【 摘 要 】

Ca₃Nb(Ga_1−xAl_x)₃Si₂O₁₄ (CNGAS) single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD) method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, a- and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.