Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Nanomaterials

Xingfang Liu¹  Yu Chen²  Changzheng Sun³  Min Guan¹  Yang Zhang¹  Feng Zhang¹  Guosheng Sun¹  Yiping Zeng¹ 

[1] Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China; E-Mails:;Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China; E-Mail:

关键词: nano-textured;    4H–SiC;    morphology;    graphene;    evolution;   

DOI  :  10.3390/nano5031532

来源: mdpi

【 摘 要 】

Nano-textured 4H–SiC homoepitaxial layers (NSiCLs) were grown on 4H–SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG with sp² disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG without sp² disorders was obtained under Ar atmosphere at 1900 K.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.