Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Materials

Nen-Wen Pu¹  Wei-Sheng Liu¹  Huai-Ming Cheng¹  Hung-Chun Hu¹  Wei-Ting Hsieh¹  Hau-Wei Yu¹  Shih-Chang Liang² 

[1] Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan; E-Mails:;Materials & Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan; E-Mail:

关键词: oxide-related compound;    indium tin oxide (ITO);    magnetron sputtering;    transparent conducting oxide (TCO);   

DOI  :  10.3390/ma8095316

来源: mdpi

【 摘 要 】

In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10⁻⁴ Ω/cm), carrier concentration (4.1 × 10²¹ cm⁻³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10²¹ cm⁻³) with a high figure of merit (81.1 × 10⁻³ Ω⁻¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.