Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar Cell

Applied Sciences

Lu Wang¹  Jianshu Han⁴  Anthony Lochtefeld²  Andrew Gerger³  Allen Barnett⁴ 

[1] Tongwei Group Co., Ltd., Chengdu 610041, China;AmberWave Inc., Salem, NH 03079, USA; E-Mail:;SolAero Technologies Corp., Albuquerque, NM 87123, USA; E-Mail:;School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia; E-Mail:

关键词: V_oc losses analysis;    18 μm;    silicon solar cell;   

DOI  :  10.3390/app5040682

来源: mdpi

【 摘 要 】

An 18 μm thin crystalline silicon solar cell was demonstrated, and its best open circuit voltage is 642.3 mV. However, this value is far from the cell’s theoretical upper limit in an ideal case. This paper explores the open circuit voltage losses of the thin silicon solar cell, starting from the ideal case, through first principle calculation and experiments. The open circuit voltage losses come from the introduced recombination due to the non-ideal surface passivation and contacts integration on front and rear surfaces, and edge isolation. This paper presents a roadmap of the open circuit voltage reduction from an ideal case of 767.0 mV to the best measured value of 642.3 mV.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.