Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied

Nano-Micro Letters

Khairul Alam¹  Md. Abdul Wahab¹ 

关键词: Zero-Schottky-barrier;    Doped contact;    Strain;    Inverse subthreshold slope;    Intrinsic cut-off frequency ;   

DOI  :  10.5101/nml.v2i2.p126-133

来源: Open Access House of Science and Technology

【 摘 要 】

Atomisticquantumsimulationisperformedtocomparetheperformanceofzero-Schottky-barrieranddopedsource-draincontactscarbonnanotubefieldeffecttransistors(CNTFETs)withstrainapplied.Thedopedsource-draincontactCNTFETsoutperformtheSchottkycontactdeviceswithandwithoutstrainapplied.Theoff-statecurrentinbothtypesofcontactissimilarwithandwithoutstrainapplied.Thisisbecausebothtypesofcontactofferverysimilarpotentialbarrierinoff-state.However,theon-statecurrentindopedcontactdevicesismuchhigherduetobettermodulationofon-statepotentialprofile,anditsvariationwithstrainissensitivetothedevicecontacttype.Theon/offcurrentratioandtheinversesubthresholdslopearebetterwithdopedsource-draincontact,andtheirvariationswithstrainarerelativelylesssensitivetothedevicecontacttype.Thechanneltransconductanceanddeviceswitchingperformancearemuchbetterwithdopedsource-draincontact,andtheirvariationswithstrainaresensitivetodevicecontacttype.

【 授权许可】

Unknown