Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

Nanomaterials and Nanotechnology

Shunsuke Ohkouchi¹  Yoshimasa Sugimoto¹  Hirotaka Ohsato¹  Takuma Yasuda¹  Yohei Nakatani¹  Koichi Takeuchi¹  Eiichiro Watanabe¹  Naoki Ikeda¹  Edmund Clarke¹  Nobuhiko Ozaki¹  Richard A. Hogg¹  Yuji Hino¹ 

关键词: Quantum Dot;    MBE;    Selective Area Growth;    In-flush;    Bi-layer QD;    OCT;    Near-infrared Broadband Light Source;   

DOI  :  10.5772/59315

来源: InTech

【 摘 要 】

Near-infrared (NIR) light sources are widely utilized in biological and medical imaging systems owing to their long penetration depth in living tissues. In a recently developed biomedical non-invasive cross-sectional imaging system, called optical coherence tomography (OCT), a broadband spectrum is also required, because OCT is based on low coherence interferometry. To meet these operational requirements, we have developed a NIR broadband light source by integrating self-assembled InAs quantum dots (QDs) grown on a GaAs substrate (InAs/GaAs QDs) with different emission wavelengths. In this review, we introduce the developed light sources and QD growth techniques that are used to control the emission wavelength for broadband emission spectra with center wavelengths of 1.05 and 1.3 μm. Although the strain-induced Stranski-Krastanov (S-K) mode-grown InAs/GaAs QDs normally emit light at a wavelength of around 1.2 μm, the central emission wavelength can be controlled to be between 0.9–1.4 μm by the use of an I...

【 授权许可】

Unknown