Modeling Titanium Oxide Growth by Chemical Vapor Deposition Using Titanium Tetra Isopropoxide

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

Hiroshi Murakami¹  Katsuya Shitanaka¹  Yasunobu Akiyama¹ 

[1] Graduate School of Engineering, Tokai University

关键词: CVD;    Titanium Oxide;    Growth Rate;    Step Coverage;    Reaction Model;   

DOI  :  10.1252/jcej.07WE118

来源: Maruzen Company Ltd

【 摘 要 】

References(17)Cited-By(3)Titanium oxide (TiO2) thin films were grown on Si(100) substrates using the chemical vapor deposition (CVD) of titanium tetra isopropoxide (TTIP; Ti(OCH(CH3)2)4). The distribution of the growth rate in the reactor and the step coverage of films grown in the range 593–1173 K could was using our “simple reaction model.” The TTIP changed into TiO2 directly via a surface reaction. The surface reaction rate constant was determined by comparing the step coverage of grown and simulated films. The activation energy of the surface reaction was 212 kJ/mol (T < 710 K).

【 授权许可】

Unknown