New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

Optica Applicata

Andrej Vincze¹  Jaroslav Kovac¹  Bogdan Paszkiewicz¹  Mateusz Wosko¹  Marek Tlaczala¹  Damian Radziewicz¹  Regina Paszkiewicz¹  Beata Sciana¹ 

关键词: growth models;    metalorganic vapor phase epitaxy (MOVPE);    gallium compounds;    semiconducting III-V materials;   

DOI  :  

学科分类：光谱学

来源: Politechnika Wroclawska * Oficyna Wydawnicza / Wroclaw University of Technology

【 授权许可】

Unknown