Technology and characterization of p-i-n photodetectors with DQW (In,Ga)(As,N)/GaAs active region

Optica Applicata

Damian Pucicki¹  Boguslaw Boratynski¹  Iwona Zborowska-Lindert¹  Damian Radziewicz¹  Beata Sciana¹ 

关键词: p-i-n photodetector;    diluted nitrides;    (In;    Ga)(As;    N);    GaAs-based photodetectors;    double quantum well (DQW) heterostructures;   

DOI  :  

学科分类：光谱学

来源: Politechnika Wroclawska * Oficyna Wydawnicza / Wroclaw University of Technology

【 授权许可】

Unknown