Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition

Optica Applicata

Tomasz PRZESLAWSKI¹  Kazimierz REGINSKI¹  Janusz KANIEWSKI¹  Agata JASIK¹  Andrzej WOLKENBERG¹ 

关键词: Hall sensors;    magnetoresistors;    InGaAs/InP heterostructures;    electronic transport;    geometric correction factor;    molecular beam epitaxy (MBE);    metalorganic chemical vapor deposition (MOCVD);   

DOI  :  

学科分类：光谱学

来源: Politechnika Wroclawska * Oficyna Wydawnicza / Wroclaw University of Technology

【 授权许可】

Unknown