SPICE MODELING OF IONIZING RADIATION EFFECTS IN CMOS DEVICES

Facta Universitatis, Series: Electronics and Energetics

Tatjana Pesic-Brdjanin¹ 

[1] Faculty of Electrical Engineering, University of Banja Luka, Republic of Srpska, Bosnia and Herzegovina$$

关键词: Ionizing radiation effects;    Trapped charges;    Spice model;    CMOS devices;   

DOI  :  10.2298/FUEE1702161P

来源: University of Nis

【 摘 要 】

Electric characteristics of devices in advanced CMOS technologies change over the time because of the impact of the ionizing radiation effects. Device aging is caused by cumulative contribution of generation of defects in the gate oxide and/or at the interface silicon-oxide. The concentration of these defects is time and bias-dependent values. Existing models include these effects through constant shift of voltage threshold. A method for including ionizing radiation effects in Spice models of MOS transistor and FiNFET, based on an auxiliary diode circuit using for derivation of values of surface potential, that also calculates the correction time-dependent voltage due to concentration of trapped charges, is shown in this paper.

【 授权许可】

Unknown