ANALYTICAL TEST STRUCTURE MODEL FOR DETERMINING LATERAL EFFECTS OF TRI-LAYER OHMIC CONTACT BEYOND THE CONTACT EDGE

Facta Universitatis, Series: Electronics and Energetics

Geoffrey K. Reeves¹  Yue Pan¹  Neelu Shrestha¹  Anthony S. Holland¹  Patrick W. Leech¹ 

[1] School of Engineering, RMIT University, Melbourne, Victoria, Australia$$

关键词: Ohmic contact;    specific contact resistance;    transfer length;    Transmission Line Model;   

DOI  :  10.2298/FUEE1702257S

来源: University of Nis

【 摘 要 】

Contact test structures where there is more than one non-metal layer, are significantly more complex to analyse compared to when there is only one such layer like active silicon on an insulating substrate. Here, we use analytical models for complex test structures in a two contact test structure and compare the results obtained with those from Finite Element Models (FEM) of the same test structures. The analytical models are based on the transmission line model and the tri-layer transmission line model in particular, and do not include vertical voltage drops except for the interfaces. The comparison shows that analytical models for tri-layer contacts to dual active layers agree well with FEM when the Specific Contact Resistances (SCR) of the contact interfaces is a significant part of the total resistance. Overall, there is a broad range of typical dual-layer-to-TLTLM contacts where the analytical model works. The insight (and quantifying) that the analytical model gives on the effect of the presence of the contact, on the distribution of current away from the contact is shown.

【 授权许可】

Unknown