TRANSIENT VOLTAGE SUPPRESSOR BASED ON DIODE-TRIGGERED LOW-VOLTAGE SILICON CONTROLLED RECTIFIER

Facta Universitatis, Series: Electronics and Energetics

Jie Zeng¹  Weihuai Wang¹  Zhihui Yu¹  Xiang Li¹  Shurong Dong¹ 

[1] Institute of Photonics and MicroelectronicsDepartment of Information Sciences and Electronic Engineering, Zhejiang UniversityHangzhou, China$$

关键词: TVS;    ESD;    LVTSCR;   

DOI  :  10.2298/FUEE1604647L

来源: University of Nis

【 摘 要 】

Transient voltage suppressor (TVS) has been widely used for electronic system ESD protection. A good TVS is usually costive as it needs some special processes and with extra masking layers for fabrication. A novel TVS design based on the standard CMOS process will be much attractive. This work proposes a new TVS device using a CMOS compatible diode-triggered silicon controlled rectifier (DLVTSCR) as the core device. Due to the available of multiple trigger mechanisms and the dual current paths for bypassing the ESD current, the newly proposed device is able to sink an ESD current of over 10 A. In addition, the holding voltage is promoted up to 6.83 V and the trigger voltage is lowered down to 10.8 V which is well suit for most portable device applications.

【 授权许可】

Unknown