CAPACITIVE METHODS FOR TESTING OF POWER SEMICONDUCTOR DEVICES

Facta Universitatis, Series: Electronics and Energetics

Bedrich Kojecký¹  Jiri Hájek¹  Vaclav Papež¹ 

[1]Department of Electrotechnology, Faculty of Electrical Engineering, Czech Technical University in Prague$$

关键词: analytically extended function;    lightning current derivative;    lightning current function;    lightning stroke;    Marquardt least-squares method;   

DOI  :  

来源: University of Nis

【 摘 要 】

Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage devices. This paper first analyzes the theoretical voltage distribution on the bases of the polarized p-n junction, as well as the size of capacity. The measurement of the voltage capacity dependence using the resonance principle is illustrated on the samples of 4kV and 6kV thyristors. The correspondence between theoretical estimate of the capacity, measured voltage capacity dependence based on the resonance principle and experimentally determined by injected charge proves the correctness of the applied procedures and assumptions.

【 授权许可】

Unknown