Experimental analysis of current conduction through thermally grown SiO2 on thick epitaxial 4H-SiC employing Poole–Frenkel mechanism

Pramana

A Azam2¹  Sanjeev K Gupta1 2²  J Akhtar1² 

[1] Department of Applied Physics, Z.H. College of Engineering and Technology, Aligarh Muslim University, Aligarh 202 002, India$$;Sensors and Nano-Technology Group, Semiconductor Devices Area, Central Electronics Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), Pilani 333 031, India$$

关键词: 4H-SiC;    thermally grown SiO2;    metal oxide–silicon carbide structure;    𝐼–𝑉 characteristics;    Poole–Frenkel conduction.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

Electrical properties of SiO2 grown on the Si-face of the epitaxial 4H-SiC substrate by wet thermal oxidation technique have been experimentally investigated in metal oxide–silicon carbide (MOSiC) structure with varying oxide thicknesses employing Poole–Frenkel (P–F) conduction mechanism. The quality of SiO2 with increasing thickness in MOSiC structure has been analysed on the basis of variation in multiple oxide traps due to effective P–F conduction range. Validity of Poole–Frenkel conduction is established quantitatively employing electric field and the oxide thickness using forward 𝐼–𝑉 characteristics across MOSiC structures. From P–F conduction plot (ln(𝐽/𝐸) vs. 𝐸1/2), it is revealed that Poole–Frenkel conduction retains its validation after a fixed electric field range. The experimental methodology adopted is useful for the characterization of oxide films grown on 4H-SiC substrate.

【 授权许可】

Unknown