Ballistic transport in semiconductor nanostructures: From quasi-classical oscillations to novel THz-emitters

Pramana

T Müller³  F Sotier3⁶  A Leitenstorfer3⁶  G Loata⁵  H Roskos⁵  G H Döhler1 2²  F Renner⁴  K Unterrainer³  M Eckardt⁴  A C Gossard¹  S Malzer1²  D Driscoll¹  T Löffler⁵  M Hanson¹  A Schwanhäußer⁴  M Betz⁶  S Trumm⁶ 

[1] Materials Department, University of California, Santa Barbara, CA 93106, USA$$;Max-Planck-Research Group of Optics, Information and Photonics, Günther-Scharowski-Strasse 1, Bau 24, University of Erlangen, 91058 Erlangen, Germany$$;Institut für Festkörperelektronik, Technische Universität Wien, Vienna, Austria$$;Institute of Technical Physics I, Erwin-Rommel-Strasse 1, University of Erlangen, 91058 Erlangen, Germany$$;Institute of Physics, Johann Wolfgang Goethe University, Max-von-Laue-Str. 1, 60438 Frankfurt, Germany$$;Physik-Department E 11, Technische Universität München, 85748 Garching, Germany$$

关键词: Ultrashort laser pulses;    semiconductor nanostructures;    ballistic transport.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

By suitable design it is possible to achieve quasi-ballistic transport in semiconductor nanostructures over times up to the ps-range. Monte-Carlo simulations reveal that under these conditions phase-coherent real-space oscillations of an electron ensemble, generated by fs-pulses become possible in wide potential wells. Using a two-color pump-and-probe technique we have been able to observe this new phenomenon in excellent agreement with the theoretical predictions. Apart from its fundamental significance, ballistic transport in nanostructures can also be used for high-efficiency coherent THz- sources. The concept of these THz-emitters and its experimental confirmation will also be presented.

【 授权许可】

Unknown