Comparison of resonant tunneling in AlGaAs/GaAs parabolic and diffusion modified quantum wells

Pramana

B K Panda1¹  Sudhira Panda1¹  S Fung1¹ 

[1] Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India$$

关键词: Parabolic and diffused resonant tunneling diodes;    transmission coefficient;    current–voltage characteristics;    dark current.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

Double barrier resonant tunneling diode using annealing induced diffusion modified quantum well is proposed as a viable alternative to that using parabolic quantum well which requires complex techniques to fabricate it. The transmission coefficients are calculated using the hybrid incremental airy function plane wave approach. The room temperature current–voltage characteristics have been calculated using transmission coefficients. The current–voltage characteristics are found to be similar in both diodes.

【 授权许可】

Unknown