Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature

Pramana

Amal K Das1 2²  B Sundaravel¹  E Z Luo¹  J B Xu¹  I H Wilson¹  B N Dev1² 

[1] Department of Electronic Engineering and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong$$;Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India$$

关键词: Passivation of Si surfaces;    Ge nanoislands;    atomic force microscopy.;   

DOI  :  

学科分类：物理（综合）

来源: Indian Academy of Sciences

【 摘 要 】

We have deposited relatively thick (∼ 60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski–Krastanov growth mode observed in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of surface free energy of the Si(111) substrate by Br-passivation. The size distribution of the Ge nanoislands has been determined. The Br–Si(111) substrates were prepared by a liquid treatment, which may not produce exactly reproducible surfaces. Nevertheless, some basic features of the nanostructural island growth are reasonably reproducible, while there are variations in the details of the island size distribution.

【 授权许可】

Unknown