Formation of Niobium Oxide Film with Duplex Layers by Galvanostatic Anodization

Bulletin of the Korean chemical society

Eul Won Seo¹  Jeong Eun Yoo¹  Jiyoung Park¹  Jinsub Choi¹  Hyun-Kee Kim¹ 

关键词: Niobium;    Porous layer;    Barrier layer;    Duplex oxide;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

Studies on niobium anodization in the mixture of 1 M H3PO4 and 1 wt % HF at galvanostatic anodization are described here in detail. Interestingly, duplex niobium oxide consisting of thick barrier oxide and correspondingly thick porous oxide was prepared at a constant current density of higher than 0.3 mAcm−2, whereas simple porous type oxide was formed at a current density of lower than 0.3 mAcm−2. In addition, simple barrier or porous type oxide was obtained by galvanostatic anodization at a single electrolyte of either 1 M H3PO4 or 1 wt % HF, respectively. The formation mechanism of duplex type structures was ascribed to different forming voltages required for moving anions.

【 授权许可】

Unknown