Preparation of SnS Thin Films by MOCVD Method Using Single Source Precursor, Bis(3-mercapto-1-propanethiolato) Sn(II)

Bulletin of the Korean chemical society

Hanggeun Kim¹  Jongpil Park¹  Miyeon Song¹  Won Mok Jung¹  Jinho Lee¹  Won Young Lee¹   Il-Wun Shim¹ 

关键词: Sn/S single precursor;    SnS thin films;    Solar cell;    MOCVD method;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

SnS thin films were deposited on glasses through metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions, using bis(3-mercapto-1-propanethiolato) tin(II) precursor without toxic H2S gas. The MOCVD process was carried out in the temperature range of 300-400 °C and the average grain size in fabricated SnS films was about 500 nm. The optical band gap of the SnS film was about 1.3 eV which is in optimal range for harvesting solar radiation energy. The precursor and SnS films were characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, DIP-EI mass spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

【 授权许可】

Unknown