Fabrication of Metal-Semiconductor Interface in Porous Silicon and Its Photoelectrochemical Hydrogen Production

Bulletin of the Korean chemical society

Seongpil Hwang¹  a¹  Ilwhan Oh¹  Joohong Kye¹ 

关键词: Porous silicon;    Electroless deposition;    Photoelectrochemistry;    Hydrogen evolution reaction;    Solar water splitting;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical H+ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 μm) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.

【 授权许可】

Unknown