Preparation of In2S3 Thin Films by MOCVD Using Single Source Precursors: Tris(N,N-ethylbutyldithiocarbamato)indium(III) and Tris(2-ethylpiperidinedithiocarbamato)indium(III)

Bulletin of the Korean chemical society

Kook Won Seo¹  Seung Soo Lee¹  Seok Hwan Yoon¹  Il-Wun Shim¹ 

关键词: Single source precursor;    Tris(N;    N-ethylbutyldithiocarbamato)indium(III) and tris(2-ethylpiperidinedithiocarbamato) indium(III);    In2S3 thin film;    MOCVD;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 授权许可】

Unknown