Encapsulated Silicon Nanocrystals Formed in Silica by Ion Beam Synthesis

Bulletin of the Korean chemical society

Wan Hong¹  Joon-Kon Kim¹  Hyung-Joo Woo¹  Gi-Dong Kim¹  Han-Woo Choi¹  Young-Yong Ji¹ 

关键词: Silicon;    Nanocrystal;    Photoluminescence;    Passivation;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in SiO2 is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.

【 授权许可】

Unknown