Atomic Layer Deposition of TiO2 Thin Films from Ti(OiPr)2(dmae)2 and H2O

Bulletin of the Korean chemical society

Yunsoo Kim¹  Mi H. Park¹  Myung M. Sung¹  Taek-Mo Chung¹  Jae P. Lee¹ 

关键词: Atomic layer deposition;    TiO2;    Precursor;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

TiO₂ thin films were grown on Si (100) substrates by atomic layer deposition using [Ti(OPrⁱ)₂(dmae)₂] and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The results show that TiO₂ ALD using [Ti(OPrⁱ)₂(dmae)₂] as a precursor is self-controlled at temperatures of 100-300 �?. At the growth temperatures below 300 �?, the surface morphology of the TiO₂ films is smooth and uniform. The TiO₂ film was grown with a preferred orientation toward the [101] direction at 400 �?.

【 授权许可】

Unknown