Bulletin of materials science | |
Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode | |
ANITA S ETHIRAJ1  PENCHALAIAH PALLA1  J P RAINA1  GOPI RAJA UPPU1  | |
[1] Center for Nanotechnology Research, VIT University, Vellore 632014, India$$Center for Nanotechnology Research, VIT University, Vellore 632014, IndiaCenter for Nanotechnology Research, VIT University, Vellore 632014, India$$ | |
关键词: Device simulation; graphene; h-BN; NEGF; RTD.; | |
DOI : | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912010230515ZK.pdf | 268KB | download |