A catalyst-free synthesis of germanium nanowires obtained by combined X-ray chemical vapour deposition of GeH$_4$ and low-temperature thermal treatment techniques

Bulletin of materials science

ALDO ARRAIS¹  ENRICO BOCCALERI¹  ROBERTO RABEZZANA²  LORENZA OPERTI²  PAOLA BENZI²  CHIARA DEMARIA²  PAOLA ANTONIOTTI² 

[1] Dipartimento di Scienze e Innovazione Tecnologica and Centro NanoSi.S.Te.M.I., Università degli Studi del Piemonte Orientale ‘A. Avogadro’, viale Teresa Michel 11, 15121 Alessandria, Italy$$Dipartimento di Scienze e Innovazione Tecnologica and Centro NanoSi.S.Te.M.I., Università degli Studi del Piemonte Orientale ‘A. Avogadro’, viale Teresa Michel 11, 15121 Alessandria, ItalyDipartimento di Scienze e Innovazione Tecnologica and Centro NanoSi.S.Te.M.I., Università degli Studi del Piemonte Orientale ‘A. Avogadro’, viale Teresa Michel 11, 15121 Alessandria, Italy$$;Dipartimento di Chimica and NIS Centre of Excellence, Università degli Studi del Piemonte Orientale, via Pietro Giuria 7, 10125 Torino, Italy$$Dipartimento di Chimica and NIS Centre of Excellence, Università degli Studi del Piemonte Orientale, via Pietro Giuria 7, 10125 Torino, ItalyDipartimento di Chimica and NIS Centre of Excellence, Università degli Studi del Piemonte Orientale, via Pietro Giuria 7, 10125 Torino, Italy$$

关键词: Nanostructures;    chemical vapour deposition (CVD);    heat treatment;    electron microscopy;    powder diffraction;    Raman spectroscopy and scattering.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

A catalyst-free innovative synthesis, by combined X-ray chemical vapour deposition and lowtemperature thermal treatments, which has not been applied since so far to the growth of germanium nanowires (Ge-NWs), produced high yields of the nanoproducts with theGeH4 reactant gas. Nanowires were grown on both surfaces of a conventional deposition quartz substrate. They were featured with high purity and very large aspect ratios (ranging from 100 to 500). Products were characterized by scanning electron microscopy with energy-dispersiveatomic X-ray fluorescence and transmission electron microscopies, X-ray powder diffraction diffractometry, thermogravimetric analysis with differential scanning calorimetry, vibrational infrared and Raman and ultraviolet�?�visible�?�near infrared spectroscopies. A quantitative nanowire bundles formation was observed in the lower surface of the quartz substrate positioned over a heating support, whilst spots of nanoflowers constituted by Ge-NWs emerged from a bulk amorphous germanium film matter, deposited on the upper surface of the substrate. Thenanoproducts were characterized by crystalline core morphology, providing semiconductive features and optical band gap of about 0.67 eV. The possible interpretative base-growth mechanisms of the nanowires, stimulated bythe concomitant application of radiant and thermal conditions with no specific added metal catalyst, are hereafter investigated and presented.

【 授权许可】

Unknown