Low resistivity molybdenum thin film towards the back contact of dye-sensitized solar cell

Bulletin of materials science

Vuong Son¹  Luong T Thu Thuy²  Nguyen Duc Chien¹  Mai Anh Tuan¹  Nguyen Ngoc Ha²  Tran Thi Ha¹ 

[1] International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi, Viet Nam$$International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi, Viet NamInternational Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi, Viet Nam$$;Department of Chemistry, Hanoi National University of Education, 136 Xuan Thuy Street, Hanoi, Viet Nam$$Department of Chemistry, Hanoi National University of Education, 136 Xuan Thuy Street, Hanoi, Viet NamDepartment of Chemistry, Hanoi National University of Education, 136 Xuan Thuy Street, Hanoi, Viet Nam$$

关键词: Back contact;    molybdenum;    DC sputtering;    dye-sensitized solar cell.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

This paper reports the optimization of the molybdenum thin film electrode as the back contact of dye-sensitized solar cell (DSSC). The molybdenum thin film was grown on the glass substrate by direct current sputtering techniques of which the sputtering power was 150Wat 18 sccm flow rate of Ar. At such sputtering parameters, the Mo film can reach the lowest resistivity of 1.28E�?6�? cm at 400 nm thick. And the reflection of Mo membrane was 82%. This value is considered as a very good result for preparation of the back contact of DSSC.

【 授权许可】

Unknown