Synthesis and characterization of silicon-doped polycrystalline GaN films by r.f. sputtering

Bulletin of materials science

S Gupta¹ 

[1] Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta 700 032, India$$Department of Engineering Physics, The Oxford College of Engineering, Bangalore 560 068, India$$Department of Materials Science, Indian Association for the Cultivation of Science, Calcutta 700 032, IndiaDepartment of Materials Science, Indian Association for the Cultivation of Science, Calcutta 700 032, India$$Department of Engineering Physics, The Oxford College of Engineering, Bangalore 560 068, India$$Department of Engineering Physics, The Oxford College of Engineering, Bangalore 560 068, IndiaDepartment of Materials Science, Indian Association for the Cultivation of Science, Calcutta 700 032, India$$Department of Engineering Physics, The Oxford College of Engineering, Bangalore 560 068, India$$

关键词: Group III nitrides;    r.f. sputtering;    optical and microstructural properties.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Silicon-doped polycrystalline GaN films were successfully deposited at temperatures ranging from 300 to 623 K on fused silica and silicon substrates by radio frequency (r.f.) magnetron sputtering at a system pressure of ~ 5 Pa. The films were characterized by optical as well as microstructural measurements. The optical properties were studied by UV�?�vis�?�NIR spectrometer and photoluminicence (PL) measurements. The microstructural information was obtained from scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM) and X-ray diffraction (XRD) studies. PL measurement at 80 K exhibited two strong transitions located at ~ 2.1 and ~ 2.7 eV along with lower intensity peaks for luminescence at the higher energy side at ~ 3.45 and ~ 3.3 eV for all the films deposited here, and the peaks at ~ 3.45 and ~ 3.3 eV could be ascribed to transitions related to excitons bound to a neutral donor for h-GaN and c-GaN, respectively. A broad peak at ~ 2.1 eV indicated the presence of yellow luminescence in all the films. The SEM and AFM images revealed that the films are compact with well-dispersed polycrystalline constituting the films. The XRD traces contained the signature of both the hexagonal and cubic phases of GaN.

【 授权许可】

Unknown