Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

Bulletin of materials science

Mukul Gupta²  Shaibal Mukherjee¹  Sushil Kumar Pandey¹  Uday P Deshpande²  Ashish Kumar¹  Saurabh Kumar Pandey¹  Vishnu Awasthi¹ 

[1] Discipline of Electrical Engineering, Hybrid Nanodevice Research Group, Indian Institute of Technology, Indore 453 441, India$$Discipline of Electrical Engineering, Hybrid Nanodevice Research Group, Indian Institute of Technology, Indore 453 441, IndiaDiscipline of Electrical Engineering, Hybrid Nanodevice Research Group, Indian Institute of Technology, Indore 453 441, India$$;Department of Atomic Energy (UGC DAE), Consortium for Scientific Research, University Grants Commission, Indore 452 001, India$$Department of Atomic Energy (UGC DAE), Consortium for Scientific Research, University Grants Commission, Indore 452 001, IndiaDepartment of Atomic Energy (UGC DAE), Consortium for Scientific Research, University Grants Commission, Indore 452 001, India$$

关键词: DIBSD;    in situ annealing;    PL;    XRD;    XPS;    ZnO.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on ð‘�?-type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ∼ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm²/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

【 授权许可】

Unknown