Structural evolution, electrical and optical properties of AZO films deposited by sputtering ultra-high density target

Bulletin of materials science

Hua Wang²  Zupei Yang³  Xiaowen Zhang²  Jiwen Xu¹ 

[1] School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China$$School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, ChinaSchool of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, ChinaSchool of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China$$;School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China$$School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, ChinaSchool of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China$$;School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, China$$School of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, ChinaSchool of Material Science and Engineering, Shaanxi Normal University, Xi’an 710062, China$$

关键词: AZO film;    ultra-high density;    ceramic target;    nanopowders;    evolution.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Aluminum-doped zinc oxide (AZO) target was fabricated using AZO nanopowders synthesized by co-precipitation method and then the AZO films with different thicknesses were deposited on glass by d.c. magnetron sputtering at room temperature. AZO target is nodules free and shows homogeneous microstructure, ultra-high density and low resistivity. ZnAl₂O₄ phase appears in AZO target and disappears in AZO films. All AZO films show c-axis preferred orientation and hexagonal structure. With increasing film thickness from 153 to 1404 nm, the crystallinity was improved and the angle of (002) peak was close to 34.45°. The increase in grain size and surface roughness is due to the increase in film thickness. The decrease of resistivity is ascribed to the increases of carrier concentration and Hall mobility. The lowest resistivity is 9.6 Ã�? 10^-4 ð›�?.cm. The average transmittance of AZO films exceeds 80%, and a sharp fundamental absorption edge with red-shifting is observed in the visible range. The bandgap decreases from 3.26 to 3.02 eV.

【 授权许可】

Unknown